Fabrication of organic thin film transistor useful for liquid crystal display device, by forming organic active pattern on gate insulating layer using rear exposing process, and forming source and drain electrodes on organic active pattern

摘要

Fabrication of organic thin film transistor (OTFT), comprises forming a gate electrode on a substrate; forming a gate insulating layer (413) on the substrate including the gate electrode; forming an organic active pattern on the gate insulating layer using a rear exposing process; and forming source and drain electrodes (416, 417) on the organic active pattern. Independent claims are also included for: (A) a method for fabricating LCD device (400), comprising forming a gate electrode on a first substrate (410); forming a gate insulating layer on the first substrate including the gate electrode; forming an organic active pattern on the gate insulating layer using a rear exposing process; forming source and drain electrodes on the organic active pattern; attaching the first substrate to a second substrate (430) with a space in-between; and forming a liquid crystal layer in the space between the first and second substrates; (B) an OTFT, comprising a gate electrode on a first substrate; a gate insulating layer on the first substrate covering the gate electrode; an organic active layer (415) on the gate insulating layer corresponding to the gate electrode; an inorganic pattern on the organic active layer; and source and drain electrodes on the inorganic pattern, the source and drain electrodes electrically connected to the organic active layer; and (C) LCD device having a first substrate having the organic thin film transistor, comprising a second substrate attached to the first substrate; and a liquid crystal layer formed between the first and second substrates.