首页> 外文会议>International meeting on information display;International display manufacturing conference and Asia display;IMID/IDMC/Asia Display 2010 >Synthesis of Highly Luminescent InP/ZnS Quantum Dots and Fabrication of White Light-Emitting Diodes
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Synthesis of Highly Luminescent InP/ZnS Quantum Dots and Fabrication of White Light-Emitting Diodes

机译:高发光InP / ZnS量子点的合成和白色发光二极管的制备

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Monodisperse InP nanocrystals were prepared with solvothermal method followed by size-selective precipitation. The luminescent properties were improved after coating the InP core with ZnS shell in a facile heating-up method. An alternation in the sequence of size-selective precipitation step and ZnS coating step rendered InP/ZnS core/shell quantum dots with higher fluorescence quantum yield (22-63%). The quantum dots embedded in a polymer matrix were incorporated on blue light-emitting diodes as the light converter to fabricate white light-emitting diodes (W-LEDs).
机译:溶剂热法制备单分散InP纳米晶体,然后进行尺寸选择沉淀。在方便的加热方法中,用ZnS壳包覆InP核后,可以改善发光性能。尺寸选择沉淀步骤和ZnS涂覆步骤顺序的交替使得InP / ZnS核/壳量子点具有更高的荧光量子产率(22-63%)。将嵌入聚合物基质中的量子点结合到作为发光转换器的蓝色发光二极管上,以制造白色发光二极管(W-LED)。

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