Zinc-Tin-Oxide Thin-Film Transistors and Circuits by Ink-Jet Printing

摘要

High performance amorphous zinc-tin-oxide (a-ZTO) thin film transistors (TFTs) and simple inverter circuits have been developed by using ink-jet printing and rapid thermal annealing (RTA) process. It was found that the substrate heating during ink-jet process had significant influence on ZTO channel morphology and the electrical properties. The TFT devices with a-ZTO layer printed at 50℃ showed the best electrical performance (μ=4.98 cm~2/Vs, I_(on)/_(off)=10~9). Also, a-ZTO TFT based inverter was fabricated with acceptable logic level conservation.