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Search of resource to control properties LP CVD SiO2 layers by monosilane oxidation

机译:寻求通过甲硅烷氧化控制LP CVD SiO 2 层的性能的资源

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The effect of reducing the homogeneous part of the monosilane oxidation process by reducing the process pressure on the properties of the SiO2 layers was investigated. This led to a reduction of the surface layers roughness, decreasing the number and the size of inclusions, reducing the fixed oxide charge, permittivity at the temperature of liquid nitrogen, and leakage currents through the insulator.
机译:研究了通过降低工艺压力对SiO 2 层的性能降低甲硅烷氧化工艺的均相部分的影响。这导致表面层粗糙度的降低,夹杂物的数量和尺寸的减少,固定氧化物电荷的减少,液氮温度下的介电常数以及通过绝缘子的泄漏电流的减少。

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