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Modeling of tot al dose radiation effect of RF PD SOI-MOSFET using Sentaurus TCAD

机译:使用Sentaurus TCAD对RF PD SOI-MOSFET的总剂量辐射效应进行建模

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摘要

An investigation of characteristics of partially depleted are - type SOI-MOSFET transistors is performed using Sentaurus TCAD and presented here. It is shown that such devices can operated as amplifiers for the frequencies of above 2 GHz. More over it was found that such devices are stable against influence of collected radiation.
机译:使用Sentaurus TCAD对部分耗尽的SOI-MOSFET晶体管的特性进行了研究,并在此处介绍。结果表明,这种设备可以用作2 GHz以上频率的放大器。进一步发现,这种装置对于收集的辐射的影响是稳定的。

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