Department of Electrical and Computer Engineering, North Carolina State University,Raleigh, North Carolina 27606, USA;
Department of Electrical and Computer Engineering, North Carolina State University,Raleigh, North Carolina 27606, USA;
Department of Electrical and Computer Engineering, North Carolina State University,Raleigh, North Carolina 27606, USA;
Department of Electrical and Computer Engineering, North Carolina State University,Raleigh, North Carolina 27606, USA;
Department of Electrical and Computer Engineering, North Carolina State University,Raleigh, North Carolina 27606, USA;
Department of Electrical and Computer Engineering, North Carolina State University,Raleigh, North Carolina 27606, USA;
Department of Electrical and Computer Engineering, North Carolina State University,Raleigh, North Carolina 27606, USA;
Department of Electrical and Computer Engineering, North Carolina State University,Raleigh, North Carolina 27606, USA;
机译:控制具有改进的栅极介电可靠性的高质量GaN基金属氧化物半导体器件的SiO_2 / GaN堆栈中的Ga氧化物层间生长和Ga扩散
机译:具有超薄(HfO_2)_x(SiO_2)_(1-x)栅极电介质的有机薄膜晶体管器件的特性和界面电子结构
机译:洞察SiO_2 / GaN MOS装置的栅极介质可靠性和稳定性
机译:ALD栅极电介质(SIO_2,HFO_2和SIO_2 / HAH)对ALGAN / GAN MOSHFET设备的电气特性和可靠性影响
机译:Algan / GaN Moshfet使用ALD电介质:性能和可靠性研究
机译:Algan / GaN在没有GaN缓冲层的SIC器件上:电气和噪声特性
机译:Algan / GaN在没有GaN缓冲层的SIC器件上:电气和噪声特性
机译:利用无缺陷栅极凹陷和激光退火改善alGaN / GaN / si mOsFET的器件性能和可靠性。