The characteristics and interfacial electronic structures of organic thin film transistor devices with ultrathin (HfO_2)_x(SiO_2)_(1-x) gate dielectrics

摘要

Pentacene-based thin film transistors with ultrathin (6 ran) (HfO_2)_x(SiO_2)_(1-x) gate dielectric layers (x=0.25 and 0.75) were fabricated for low-voltage operation. The devices with ultrathin (HfO_2)_x(SiO_2)_(1-x) as the gate dielectric layer were ope