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AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability

机译：Algan / GaN Moshfet使用ALD电介质：性能和可靠性研究

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作者
Azam, Faisal.;
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作者单位

North Carolina State University.;

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授予单位 North Carolina State University.;
学科
学位 Ph.D.
年度 2018
页码 131 p.
总页数 131
原文格式 PDF
正文语种 eng
中图分类 AAI11017863;
关键词
Gallium nitride;

机译：氮化镓;

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专利

1. High-temperature performance of AlGaN/GaN HFETs and MOSHFETs [J] . D. Donoval, M. Florovic, D. Gregusova, Microelectronics reliability . 2008,第10期

机译：AlGaN / GaN HFET和MOSHFET的高温性能
2. Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs [J] . Michel Marso, Gero Heidelberger, Klaus Michael Indlekofer, IEEE Transactions on Electron Devices . 2006,第7期

机译：与HFET相比，AlGaN / GaN MOSHFET的RF性能得到改善的根源
3. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress [J] . A. Tarakji, x. Hu, A. Koudymov Solid-State Electronics . 2002,第8期

机译：高温应力下GaN / AlGaN MOSHFET的直流和微波性能
4. Impact of ALD Gate Dielectrics (SiO_2, HfO_2, and SiO_2/HAH) on Device Electrical Characteristics and Reliability of AlGaN/GaN MOSHFET Devices [C] . Bongmook Lee, Casey Kirkpatrick, Young-Hwan Choi, Physics and technology of high-k materials 9 . 2011

机译：ALD栅极电介质（SiO_2，HfO_2和SiO_2 / HAH）对AlGaN / GaN MOSHFET器件的电学特性和可靠性的影响
5. Investigation of ALD Dielectrics for Improved Threshold Voltage Stability and Current Collapse Suppression in AlGaN/GaN MOS-HFETs. [D] . Ramanan, Narayanan. 2014

机译：为改善AlGaN / GaN MOS-HFET中的阈值电压稳定性和电流崩塌抑制而研究ALD介电材料的研究。
6. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique [O] . Xiao-Yong Liu, Sheng-Xun Zhao, Lin-Qing Zhang, 2015

机译：通过热ALD技术生长具有AlN栅极电介质的AlGaN / GaN MISHEMT
7. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique [O] . Xiao-Yong Liu, Sheng-Xun Zhao, Lin-Qing Zhang, 2015

机译：通过热ALD技术生长具有AlN栅极电介质的AlGaN / GaN MISHEMT
8. Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing. [R] . Wallace, R. M. 2015

机译：利用无缺陷栅极凹陷和激光退火改善alGaN / GaN / si mOsFET的器件性能和可靠性。

AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability

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