机译:Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques
机译:Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
机译:Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
机译:Corrigendum to “TCAD simulations of FDSOI devices down to deep cryogenic temperature” Solid-State Electron. 194 (2022) 108319 (Solid State Electronics (2022) 194, (S0038110122000910), (10.1016/j.sse.2022.108319))