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MIXED CONDUCTING VOLATILE MEMORY ELEMENT FOR ACCELERATED WRITING OF NONVOLATILE MEMRISTIVE DEVICE
MIXED CONDUCTING VOLATILE MEMORY ELEMENT FOR ACCELERATED WRITING OF NONVOLATILE MEMRISTIVE DEVICE
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机译:混合进行挥发性记忆元素加快写作的非易失性记忆性设备
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摘要
An analog memory structure, and methods of writing to such a structure are provided. The analog memory structure includes a volatile memory element in series with a non-volatile memory element. The analog memory structure may change resistance upon application of a voltage. This may enable accelerated writing of the analog memory structure.
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