首页> 外国专利> Low-diffusion copper/nickel alloy powder for ceramic devices, manufacturing method the same, paste including copper/nickel alloy powder, and ceramic device including copper/nickel alloy powder

Low-diffusion copper/nickel alloy powder for ceramic devices, manufacturing method the same, paste including copper/nickel alloy powder, and ceramic device including copper/nickel alloy powder

机译:陶瓷器件用低扩散铜/镍合金粉末,其制造方法,包括铜/镍合金粉末的浆料,以及包括铜/镍合金粉末的陶瓷器件

摘要

The present invention relates to a low-diffusion copper/nickel alloy powder for a ceramic device, a method for manufacturing a copper/nickel alloy powder, a paste including the copper/nickel alloy powder, and a ceramic device including a copper/nickel alloy powder, a copper (Cu) powder and a powder mixing step of mixing nickel (Ni) powder; a heat treatment reduction step of heat-treating the copper powder and the nickel powder under a reducing atmosphere to form a copper/nickel alloy powder; a heat treatment oxidation step of heat-treating the copper/nickel alloy powder in an oxidizing atmosphere to form a copper oxide/nickel oxide powder; a grinding step of pulverizing the copper oxide/nickel oxide powder to reduce the diameter; and a heat treatment re-reduction step of re-reducing the copper oxide/nickel oxide powder having the reduced diameter to a copper/nickel alloy powder by heat treatment in a reducing atmosphere. As a result, it is possible to prevent the diffusion of copper constituting the internal electrode into the PZT-based ceramic, thereby stably maintaining the insulating properties of the PZT-based ceramic, as well as improving the electrical conductivity of the internal electrode.
机译:本发明涉及一种用于陶瓷装置的低扩散铜/镍合金粉末,一种制造铜/镍合金粉末的方法,一种包括铜/镍合金粉末的糊状物,以及一种包括铜/镍合金粉末、铜(Cu)粉末和混合镍(Ni)粉末的粉末混合步骤的陶瓷装置;热处理还原步骤,在还原气氛下对铜粉和镍粉进行热处理以形成铜/镍合金粉末;热处理氧化步骤,在氧化气氛中对铜/镍合金粉末进行热处理,以形成氧化铜/氧化镍粉末;粉碎氧化铜/氧化镍粉末以减小直径的研磨步骤;以及热处理-再还原步骤,通过在还原气氛中热处理将具有减小直径的氧化铜/氧化镍粉末再还原为铜/镍合金粉末。因此,可以防止构成内电极的铜扩散到PZT基陶瓷中,从而稳定地保持PZT基陶瓷的绝缘性能,以及提高内电极的电导率。

著录项

  • 公开/公告号KR20220064828A

    专利类型

  • 公开/公告日2022-05-19

    原文格式PDF

  • 申请/专利权人 한국전기연구원;

    申请/专利号KR1020200151363

  • 发明设计人 정순종;임동환;구보근;김민수;

    申请日2020-11-12

  • 分类号B22F9/20;B22F1;B22F9/04;H01B1/02;

  • 国家 KR

  • 入库时间 2022-08-25 01:08:03

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