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COMPOSITION, SILICON-CONTAINING FILM, METHOD OF FORMING SILICON-CONTAINING FILM, AND METHOD OF TREATING SEMICONDUCTOR SUBSTRATE
COMPOSITION, SILICON-CONTAINING FILM, METHOD OF FORMING SILICON-CONTAINING FILM, AND METHOD OF TREATING SEMICONDUCTOR SUBSTRATE
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机译:组合物,含硅膜,形成含硅膜的方法,以及处理半导体衬底的方法
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摘要
A composition includes a solvent and at least one compound selected from the group consisting of: a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2), and a second compound which comprises the second structural unit represented by the formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3; R4 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2. A sum of e and f is no greater than 3. In the case where the at least one compound is the second compound, f is 1 or 2, and at least one R4 represents a hydrogen atom.;
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