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SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor
SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor
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机译:表面密度小于等于0.5缺陷/CM2的含有大凹坑缺陷的SiC外延片及其生产方法
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摘要
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.
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