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Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
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机译:用于有效阻挡发光器件中电子和空穴的应变AlGaInP层
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摘要
A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.
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