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Strained AlGaInP layer for efficient electron and hole blocks in light emitting devices
Strained AlGaInP layer for efficient electron and hole blocks in light emitting devices
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机译:应变AlGaInP层用于发光器件中的有效电子和空穴阻挡
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摘要
The light emitting device is disclosed. The light emitting device has an electron block layer, a hole block layer arranged so as to have at least a part of compression strain, and an active layer arranged between the hole block layer and the electron block layer. ..
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