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Wafer manufacturing method, epitaxial wafer manufacturing method, wafers manufactured by this, and epitaxial wafers

机译:晶圆制造方法,外延晶圆制造方法,由此制造的晶圆,以及外延晶圆

摘要

PROBLEM TO BE SOLVED: To provide a wafer having a low density of micropipe defects and minimizing the generation of particles and scratches, an epitaxial wafer having a low density of downfalls, triangles and carrot defects, and exhibiting excellent element characteristics, and a method for manufacturing the same. I will provide a. SOLUTION: The average density of particles having one surface and the other surface, the total scratch length on the one surface is equal to or less than the length of the diameter of the wafer, and the particle size is 0.3 μm or more on the one surface is 3 / cm. Provided is a wafer having an average density of 2 or less and an average density of micropipes of 3 / cm 2 or less on one surface thereof. [Selection diagram] None
机译:需要解决的问题:提供一种具有低密度的微管缺陷并将颗粒和划痕的产生降至最低的晶圆,一种具有低密度的下降、三角形和胡萝卜形缺陷并表现出优异的元件特性的外延晶圆,以及一种制造该外延晶圆的方法。我将提供一个解决方案:一个表面和另一个表面的颗粒平均密度,一个表面上的总划痕长度等于或小于晶圆直径的长度,一个表面上的颗粒大小为0.3μm或更大,为3/cm。本发明提供一种晶片,其一个表面上的平均密度为2或更小,微管的平均密度为3/cm2或更小。[选择图]无

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