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Method for preparing CsPbX3 perovskite quantum dot film by one-step crystallization

机译:一步结晶法制备CsPbX3钙钛矿型量子点薄膜的方法

摘要

The present disclosure provides a method for preparing a perovskite quantum dot film by one-step crystallization, and belongs to the field of perovskite quantum dot material technology. The present disclosure uses adamantanemethylamine and hydrohalic acid as ligands, first mixes a cesium halide, a lead halide, and the ligands with a solvent to obtain a precursor solution, then deposits the precursor solution on a substrate, and then heats the substrate to obtain the CsPbX3 perovskite quantum dot film. The present disclosure uses adamantanemethylamine and hydrohalic acid as the ligands, which can quickly coat the perovskite, complex with the CsPbX3 perovskite, and directly form the perovskite quantum dot via a strong steric effect. Further, the present disclosure is simple and inexpensive, can directly obtain a high-quality perovskite quantum dot film with a thickness of more than 500 nm by one-step crystallization.
机译:本发明提供了一种一步结晶法制备钙钛矿型量子点薄膜的方法,属于钙钛矿型量子点材料技术领域。本发明使用金刚烷甲胺和氢卤酸作为配体,首先将卤化铯、卤化铅和配体与溶剂混合以获得前体溶液,然后将前体溶液沉积在基板上,然后加热基板以获得CsPbX3钙钛矿量子点膜。本发明使用金刚烷甲胺和氢卤酸作为配体,其可快速包覆钙钛矿,与CsPbX3钙钛矿复合,并通过强立体效应直接形成钙钛矿量子点。此外,本发明简单且廉价,可通过一步结晶直接获得厚度超过500 nm的高质量钙钛矿量子点膜。

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