首页> 外国专利> Vertical Junction To Provide Optimal Transverse Bias For Dual Free Layer Read Heads

Vertical Junction To Provide Optimal Transverse Bias For Dual Free Layer Read Heads

机译:垂直结为双自由层读头提供最佳横向偏置

摘要

The present disclosure generally relates to a read head assembly having a dual free layer (DFL) structure disposed between a first shield and a second shield at a media facing surface. The read head assembly further comprises a rear hard bias (RHB) structure disposed adjacent to the DFL structure recessed from the media facing surface, where an insulation layer separates the RHB structure from the DFL structure. The insulation layer is disposed perpendicularly between the first shield and the second shield. The DFL structure comprises a first free layer and a second free layer having equal stripe heights from the media facing surface to the insulation layer. The RHB structure comprises a seed layer, a bulk layer, and a capping layer. The capping layer and the insulation layer prevent the bulk layer from contacting the second shield.
机译:本发明一般涉及一种具有双自由层(DFL)结构的读取头组件,该结构布置在第一屏蔽和第二屏蔽之间,位于面向介质的表面。读取头组件还包括后硬偏压(RHB)结构,该后硬偏压(RHB)结构布置在从面向介质的表面凹陷的DFL结构附近,其中绝缘层将RHB结构与DFL结构分离。绝缘层垂直地设置在第一屏蔽和第二屏蔽之间。DFL结构包括第一自由层和第二自由层,从面向介质的表面到绝缘层的条纹高度相等。RHB结构包括种子层、体层和覆盖层。覆盖层和绝缘层防止本体层接触第二屏蔽层。

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