METHOD FOR PRODUCING A TRANSISTOR CHANNEL WITH VERTICAL TAPED NANOSCHES CONNECTED BY FINANCIAL BRIDGE ZONES

摘要

Method (4000) for forming a semiconductor unit (1600), wherein the method comprises:forming (4002) a nanolayer stack over a substrate (1604), wherein the nanolayer stack has one or more first semiconductor layers (1606) and one or more first victim layers (1608);forming (4004) a trench (1706) by removing a portion of one or more first semiconductor layers and one or more first victim layers, wherein through the trench an area of a bottom victim layer of one or more first victim layers is exposed; andFilling (4006) of the trench with one or more second semiconductor layers (1802) and one or more second victim layers (1804), so that each of the one or more second semiconductor layers is in contact with a sidewall of one or more first semiconductor layers, wherein the one or more second semiconductor layers each form a vertical fin, the long sides of which are defined by sides of the trench.