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Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere
Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere
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机译:通过控制炉内气氛的氧浓度来生产III族氮化物半导体的方法
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摘要
The present invention suppresses anomalous growth of a Group III nitride semiconductor at the periphery of a seed substrate. The invention is directed to a method for producing a Group III nitride semiconductor including feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. The oxygen concentration of the furnace internal atmosphere is elevated after the growth initiation temperature of the Group III nitride semiconductor has been achieved. In a period from the initiation of the growth to a certain timing, the oxygen concentration of the furnace internal atmosphere is controlled to 0.02 ppm or less, and thereafter, to greater than 0.02 ppm and 0.1 ppm or less.
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