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ISOLATED DC-DC POWER CONVERTER WITH LOW RADIATED EMISSIONS

机译:低辐射隔离DC-DC功率变换器

摘要

An example DC-DC power converter circuit includes an H-bridge switching circuit (103) operatively coupled with a transformer (T1). The switching circuit (103) is compensated to account for parasitic differences between the high-side (power) and low-side (ground). For instance, PMOS transistors (Q1 and Q2) connected to the high-side are sized larger to substantially match on-resistance of NMOS transistors (Q3 and Q4) connected to the low-side (e.g., such that the on-resistances are all within a tolerance of one another), and the NMOS transistors (Q3 and Q4) include additional gate-drain capacitance (C1 and C2) to substantially match gate-drain capacitance of the larger PMOS transistors (e.g., such that the gate-drain capacitances are all within a tolerance of one another, or within a tolerance of a target gate-drain capacitance value). In addition, the transformer (T1) is configured with physical symmetry, such that the inductive and capacitive mid-points of the transformer are substantially co-located.p
机译:示例性DC-DC功率转换器电路包括与变压器(T1)操作耦合的H桥开关电路(103)。对开关电路(103)进行补偿,以考虑高压侧(电源)和低压侧(接地)之间的寄生差异。例如,连接到高压侧的PMOS晶体管(Q1和Q2)的尺寸更大,以基本上匹配连接到低压侧的NMOS晶体管(Q3和Q4)的导通电阻(例如,导通电阻都在彼此的公差范围内),NMOS晶体管(Q3和Q4)包括额外的栅极漏极电容(C1和C2),以基本上匹配较大PMOS晶体管的栅极漏极电容(例如,使得栅极漏极电容都在彼此的容差内,或在目标栅极漏极电容值的容差内)。此外,变压器(T1)具有物理对称性,使得变压器的电感和电容中点基本上位于同一位置。P

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