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CONTENT-ADDRESSABLE MEMORY FOR SIGNAL DEVELOPMENT CACHING IN A MEMORY DEVICE
CONTENT-ADDRESSABLE MEMORY FOR SIGNAL DEVELOPMENT CACHING IN A MEMORY DEVICE
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机译:内容可寻址存储器用于存储设备中的信号开发缓存
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摘要
Methods, systems, and devices related to content-addressable memory for signal development caching are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory device may also include storage, such as a content-addressable memory, configured to store a mapping between addresses of the signal development cache and addresses of the memory array. In various examples, accessing the memory device may include determining and storing a mapping between addresses of the signal development cache and addresses of the memory array, or determining whether to access the signal development cache or the memory array based on such a mapping.
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