Semiconductor device structure comprising:a substrate (110);a conductive structure (130) above the substrate having an upper surface (132), sidewalls (134) and a lower surface (136);several first metal oxide fibres (140) above the conductive structure (130); anda dielectric layer (150) above the substrate (110),covering the conductive structure (130) and the first metal oxide fibers (140), the dielectric layer (150) filling gaps between the first metal oxide fibers (140), the dielectric layer (150) having a through hole (152) exposing part of the conductive structure (130), wherein in the area of the through hole (152) there are no metal oxide fibers (140) on the upper surface (132) of the conductive structure (130), wherein the dielectric layer (150) comprises an oxide material;wherein the semiconductor device structure further comprises:a conductive layer (160) above the dielectric layer (150) extending into the through hole (152) to connect electrically to the conductive structure (130), having an upper surface (162) and side walls (164);wherein the first metal oxide fibers (140) are formed above the upper surface (132) and the side walls (134) of the conductive structure (130) and several second metal oxide fibers (170) are formed above the upper surface (162) and the side walls (164) of the conductive layer (160).
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