首页> 外国专利> MULTIPLEXER CELL AND SEMICONDUCTOR DEVICE HAVING CAMOUFLAGE DESIGN, AND METHOD FOR FORMING MULTIPLEXER CELL

MULTIPLEXER CELL AND SEMICONDUCTOR DEVICE HAVING CAMOUFLAGE DESIGN, AND METHOD FOR FORMING MULTIPLEXER CELL

机译:具有伪装设计的多路复用器单元和半导体器件,以及形成多路复用器单元的方法

摘要

A semiconductor device includes a semiconductor substrate, a conductive segment, a conductive layer, a first contact element and a second contact element. The semiconductor substrate includes an active region. The conductive segment is formed on the semiconductor substrate, and extends across the active region. The conductive layer is formed over the semiconductor substrate and the conductive segment. The first contact element, formed between the conductive segment and a first conductive portion of the conductive layer, is arranged to electrically connect the conductive segment to the first conductive portion. The second contact element is formed between the conductive segment and a second conductive portion of the conductive layer. The first contact element and the second contact element are formed on the conductive segment and spaced apart from each other. The second contact element is arranged to electrically isolate the conductive segment from the second conductive portion.
机译:半导体器件包括半导体衬底,导电区段,导电层,第一接触元件和第二接触元件。 半导体衬底包括有源区。 导电区段形成在半导体衬底上,并横跨有源区延伸。 在半导体衬底和导电段上形成导电层。 形成在导电层的导电段和第一导电部分之间的第一接触元件被布置成将导电段电连接到第一导电部分。 第二接触元件形成在导电层的导电区段和第二导电部分之间。 第一接触元件和第二接触元件形成在导电段上并彼此间隔开。 第二接触元件布置成将导电部分与第二导电部分电隔离。

著录项

  • 公开/公告号EP3944500A1

    专利类型

  • 公开/公告日2022-01-26

    原文格式PDF

  • 申请/专利权人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;

    申请/专利号EP20210186559

  • 发明设计人 LU SHIH-LIEN LINUS;

    申请日2021-07-20

  • 分类号H03K17/693;H01L23;

  • 国家 EP

  • 入库时间 2022-08-24 23:31:27

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号