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Fabrication of semiconductor structure having group III-V device on group IV substrate with separately formed contacts using different metal liners
Fabrication of semiconductor structure having group III-V device on group IV substrate with separately formed contacts using different metal liners
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机译:使用不同金属衬里的分别形成触点,在III-V族装置上具有III-V族装置的半导体结构的制造
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摘要
In fabricating a semiconductor structure, a group IV substrate and a group III-V chiplet are provided. The group III-V chiplet is bonded to the group IV substrate, and patterned to produce a patterned group III-V device. A blanket dielectric layer is formed over the patterned group III-V device. A first contact hole is formed in the blanket dielectric layer over a first portion of the patterned group III-V device. A first liner stack and a first filler metal are subsequently formed in the first contact hole. A second contact hole is formed in the blanket dielectric layer over a second portion of the patterned group III-V device. A second liner stack and a second filler metal are subsequently formed in the second contact hole. A first bottom metal liner of the first liner stack can be different from a second bottom metal liner of the second liner stack.
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