LAYER STRUCTURE FOR MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND METHOD FOR STORING DATA IN MAGNETIC MEMORY ELEMENT

摘要

Provided are a layer structure for a magnetic memory element, the layer structure having improved controllability of a drive current required for domain wall displacement and that of domain wall displacement, and a magnetic memory element comprising the layer structure. A layer structure (9) of a magnetic memory element (10) comprises a plurality of first ferromagnetic layers (1) with a switchable spin state, and an interface layer (2) disposed between the plurality of first ferromagnetic layers (1) to constitute a domain wall. The interface layer (2) generates a ferromagnetic interaction (Aex) between the plurality of first ferromagnetic layers (1).