首页> 外国专利> Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensors

Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensors

机译:用于子微米分辨率压力传感器的磁隧道结阵列中的多层磁性自由层结构

摘要

A sub-micrometer pressure sensor is provided that includes a multilayered magnetic tunnel junction (MTJ) pillar that contains a non-magnetic metallic spacer separating a first magnetic free layer from a second magnetic free layer. The presence of the non-magnetic metallic spacer in the multilayered MTJ pillar improves the sensitivity without compromising area, and makes the pressure sensor binary (either “on” or “off”) with little or no drift, and sensitivity change over time. Moreover, the resistivity switch in such a pressure sensor is instantly and a low error rate is observed.
机译:提供子微米压力传感器,其包括多层磁隧道结(MTJ)柱,其包含与第二无磁层分离第一磁性自由层的非磁性金属间隔物。 多层MTJ支柱中的非磁性金属间隔物的存在改善了不损害区域的灵敏度,并且使压力传感器二进制(“ON”或“OFF”)几乎没有或没有漂移,并且随时间随时间变化而变化。 此外,这种压力传感器的电阻率开关即时,观察到低差错率。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号