首页>
外国专利>
METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH DIFFERENT NON-SEMICONDUCTOR THERMAL STABILITIES
METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH DIFFERENT NON-SEMICONDUCTOR THERMAL STABILITIES
展开▼
机译:使用具有不同非半导体热稳定性的超晶格的制造半导体器件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for making a semiconductor device may include forming first and second superlattices adjacent a semiconductor layer. Each of the first and second superlattices may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The second superlattice may have a greater thermal stability with respect to non-semiconductor atoms therein than the first superlattice. The method may further include heating the first and second superlattices to cause non-semiconductor atoms from the first superlattice to migrate toward the at least one non-semiconductor monolayer of the second superlattice.
展开▼