Electro-optical unit with III-V reinforcement materials and integrated heat sink

摘要

An electro-optical unit (11; 12; 13; 14) comprising: a first wafer component (1) comprising a silicon substrate (100) and a cladding layer (101, 103) on said silicon substrate (100), said cladding layer ( 101, 103) has a cavity (104c) formed therein, the cavity (104c) being filled with a heat spreader (104; 104a, 104b) having a greater thermal conductivity than that of the cladding layer (101, 103), the cavity (104c) in the cladding layer (101, 103) extends up to the silicon substrate (100) such that the heat spreader (104; 104a, 104b) is in contact with the silicon substrate (100);a second wafer component (2nd ) comprising a stack (108) of III-V semiconductor amplification materials designed for optical amplification of a given radiation, the second wafer component (2) being so bonded to the first wafer component (1). that a bottom of the stack (108) of III-V semiconductor - reinforcement materials in thermal communication with the heat spreader (104; 104a, 104b), the stack (108) of III-V semiconductor reinforcement materials being structured to face and at least partially overlap the heat spreader (104; 104a, 104b); and a silicon component (102) embedded in the remaining cladding layer and disposed opposite the stack (108) of III-V semiconductor gain materials; characterized in that an index of refraction of the heat spreader (104; 104a, 104b) is lower than an index of refraction the silicon substrate (100);the refractive index of the heat spreader (104; 104a, 104b) is lower than an average refractive index of the stack (108) of III-V semiconductor gain materials at the given radiation; and the heat spreader (104; 104a, 104b) is an electrically insulating heat spreader.