A method of patterning a substrate using a layer having a plurality of materials

摘要

The techniques disclosed herein provide methods for patterning to create high-resolution features and cutting to pitch of sub-resolution features. Techniques herein include forming a bi- or multi-layer mandrel, and forming one or more lines of material moving along the sidewalls of the mandrel. Different materials can have different etch resistances, so that one or more materials can be selectively etched to create features and cuts and blocks in places. Etching using an etch mask located above or below this multi-line layer also defines a pattern that is transferred to the underlying layer. Having a mandrel of two or more layers of material allows one of these materials to be sacrificed, such as when etching a spin-on reverse overcoat material that fills the open space but leaves an overburden.