DOPING STRUCTURE OF SILICON-BASED ELECTRO-OPTIC MODULATOR

摘要

A doping structure of a silicon-based electro-optic modulator, the doping structure comprising: a first doped region (2), a second doped region (3), a third doped region (4), and a fourth doped region (5); the first doped region (2) and the second doped region (3) have the same type of doping, the second doped region (3) and the third doped region (4) have opposite types of doping, and the third doped region (4) and the fourth doped region (5) have the same type of doping; the contact surfaces of the second doped region (3) and the third doped region (4) are staggered to form a periodic structure, and the periodic structure is adjusted by means of the amplitude of a microwave signal, thereby improving the modulation efficiency of the modulator.