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THREE-DIMENSIONAL MEMORY DEVICE CONTAINING LOW RESISTANCE SOURCE-LEVEL CONTACT AND METHOD OF MAKING THEREOF
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING LOW RESISTANCE SOURCE-LEVEL CONTACT AND METHOD OF MAKING THEREOF
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机译:包含低电阻源电平接触的三维存储器件及其制造方法
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摘要
A source-level sacrificial layer and an alternating stack of insulating layers and spacer material layers are formed over a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory openings are formed through the alternating stack and the source-level sacrificial layer, and memory opening fill structures are formed. A source cavity is formed by removing the source-level sacrificial layer, and exposing an outer sidewall of each vertical semiconductor channel in the memory opening fill structures. A metal-containing layer is deposited on physically exposed surfaces of the vertical semiconductor channel and the vertical semiconductor channel is crystallized using metal-induced lateral crystallization. Alternatively or additionally, cylindrical metal-semiconductor alloy regions can be formed around the vertical semiconductor channels to reduce contact resistance. A source contact layer can be formed in the source cavity.
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