The versions shown here include Forksheet transistor building elements with depopulated channels. For an example, an integrated circuit structure includes a backbone. A first transistor building element includes a first vertical stack of semiconductor channels adjacent to a first edge of the backbone. The first vertical stack of semiconductor channels includes the first semiconductor channelsand a second semiconductor channel over or under the first semiconductor channels. A concentration of a doping substance in the first semiconductor channels is less than a concentration of the doping substance in the second semiconductor channel. A second transistor building element includes a second vertical pile of semiconductor channels adjacent to a second edge of the backbone opposite the first edge.
展开▼
