首页>
外国专利>
ORGANIC DANIGHT TRANSISTER AND PROCEDURE FOR THE PRODUCTION OF AN ORGANIC DANIGHT TRANSISTER
ORGANIC DANIGHT TRANSISTER AND PROCEDURE FOR THE PRODUCTION OF AN ORGANIC DANIGHT TRANSISTER
展开▼
机译:有机Danight晶体管和用于生产有机Danight晶体管的程序
展开▼
页面导航
摘要
著录项
相似文献
摘要
Provided are an organic thin film transistor having high bendability and high stability in air and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a gas barrier layer consisting of a resin layer and an inorganic layer; a transistor element that is formed on one main surface side of the gas barrier layer and includes a gate electrode, an insulating film, an organic semiconductor layer, a source electrode, and a drain electrode; and a sealing layer that is laminated on a side of the transistor element opposite to the gas barrier layer through an adhesive layer, in which a thickness of the resin layer in the gas barrier layer is less than a thickness ranging from the inorganic layer to the sealing layer in the gas barrier layer.
展开▼