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Photodetector with Superconductor Nanowire Transistor Based on Interlayer Heat Transfer

机译:基于层间传热的超导体纳米线晶体管光电探测器

摘要

A transistor includes (i) a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature and (ii) a second wire including a superconducting component configured to operate in a superconducting state while: a temperature of the superconducting component is below a superconducting threshold temperature and a first input current supplied to the superconducting component is below a current threshold. The semiconducting component is located adjacent to the superconducting component. In response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first input current exceeds the lowered current threshold.
机译:晶体管包括(i)包括半导体部件的第一线,该半导体部件被配置为在半导体阈值温度高于半导体阈值温度的温度下操作,并且(ii)包括配置成在超导状态下操作的超导部件的第二导线,同时:温度 超导部件低于超导阈值温度,并且提供给超导组分的第一输入电流低于电流阈值。 半导体部件位于超导组分附近。 响应于第一输入电压,半导体组件被配置为产生足以降低电流阈值的电磁场,使得第一输入电流超过降低的电流阈值。

著录项

  • 公开/公告号US2021408357A1

    专利类型

  • 公开/公告日2021-12-30

    原文格式PDF

  • 申请/专利权人 PSIQUANTUM CORP.;

    申请/专利号US202117195522

  • 发明设计人 FARAZ NAJAFI;

    申请日2021-03-08

  • 分类号H01L39/10;H01L31;H01L39/22;H01L39/18;G01J1/44;H01L31/0224;H01L31/113;H01L39/16;H01L29/43;H01L29/786;H01L39/14;

  • 国家 US

  • 入库时间 2022-08-24 23:07:08

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