Photodetector with superconductor nanowire transistor based on interlayer heat transfer

摘要

The various implementations described herein include methods, devices, and systems for detecting light. In one aspect, a photodetector device includes: a superconducting wire, and a transistor that includes a semiconducting component and a superconducting component. The superconducting wire is electrically coupled to the superconducting component. The semiconducting component is located adjacent to the superconducting component. The superconducting component is configured to, in response to receiving an input current exceeding a current threshold, transition from a superconducting state to a non-superconducting state and generate heat sufficient to increase a temperature of the semiconducting component from a temperature below a semiconducting threshold temperature to a temperature above the semiconducting threshold temperature.