SiC electronic device fabricated by Al/Be co-implantation

摘要

A method for p-type doping of a silicon carbide layer includes first implantation step of implanting aluminum dopants into a preselected region of the silicon carbide layer by ion implantation, an annealing step of annealing the silicon carbide layer after performing the first implantation step, a second implantation step of implanting beryllium dopants into the preselected region by ion implantation before the annealing step. A ratio of the total aluminum dose in the first implantation step to the total beryllium dose in the second implantation step is in a range between 0.1 and 10.