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Epitaxial fin structures having an epitaxial buffer region and an epitaxial capping region
Epitaxial fin structures having an epitaxial buffer region and an epitaxial capping region
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机译:具有外延缓冲区和外延覆盖区域的外延翅片结构
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摘要
A method of forming a semiconductor device having first and second fin structures on a substrate includes forming a first epitaxial region of the first fin structure and forming a second epitaxial region of the second fin structure. The method further includes forming a buffer region on the first epitaxial region of the first fin structure and performing an etch process to etch back a portion of the second epitaxial region. The buffer region helps to prevents etch back of a top surface of the first epitaxial region during the etch process. Further, a capping region is formed on the buffer region and the etched second epitaxial region.
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