TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING

摘要

The method includes providing first and second channel layers in NMOS and PMOS regions of a substrate, respectively; depositing a first layer comprising hafnium oxide over the first and second channel layers; forming a first dipole pattern on the second channel layer without forming on the first channel layer; driving the first metal from the first dipole pattern into the first layer by annealing; removing the first dipole pattern; depositing a second layer comprising hafnium oxide over the first and second channel layers and over the first layer; forming a second dipole pattern on the first channel layer and on the second layer without forming on the second channel layer; driving the second metal from the second dipole pattern into the second layer by annealing; removing the second dipole pattern; and depositing a third layer comprising hafnium oxide over the first and second channel layers and over the second layer.