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METHOD OF THINNING A SEMICONDUCTOR SUBSTRATE TO HIGH EVENNESS AND SEMICONDUCTOR SUBSTRATE HAVING A DEVICE LAYER OF HIGH EVENNESS
METHOD OF THINNING A SEMICONDUCTOR SUBSTRATE TO HIGH EVENNESS AND SEMICONDUCTOR SUBSTRATE HAVING A DEVICE LAYER OF HIGH EVENNESS
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机译:将半导体衬底缩小到高均匀度和半导体衬底的方法,具有高均匀度的器件层
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摘要
A method of manufacturing a semiconductor device is described. The method includes providing a semiconductor substrate. The semiconductor substrate includes a high-doped semiconductor substrate layer, a high-doped semiconductor device layer, and a low-doped semiconductor etch stop layer arranged between the high-doped semiconductor substrate layer and the high-doped semiconductor device layer. The high-doped semiconductor substrate layer is removed, wherein the removing includes dopant selective chemical etching stopping at the low-doped semiconductor etch stop layer. Further, the low-doped semiconductor etch stop layer is thinned to generate an exposed surface of the high-doped semiconductor device layer.
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