Fluctuating low resistance line non-volatile memory element and its operation method

摘要

One embodiment of the present invention is a variable low resistance line memory device and a method of operating the same, wherein a base containing a spontaneously polarizable material, a gate arranged adjacent to the base, and an electric field are applied to the base through the gate. The variable low resistance line corresponding to the boundary between at least two polarization regions formed on the base and having polarities in different directions and selectively the polarization regions having polarizations in different directions. The variable low resistance line comprises a source located in contact with the variable low resistance line and a drain located in contact with the variable low resistance line, wherein the variable low resistance line is the same as the variable low resistance line in the base region. A memory element formed in a region having a lower electrical resistance than other adjacent regions and a method of operating the same are disclosed.