GATE STRUCTURE OF A HALF-LIGHT BUILDING EMENT AND PROCEDURE FOR ITS OWN DEVELOPMENT

摘要

A semiconductor element and a process for forming it are provided. A process involves the formation of a Finnish that extends from a substrate. A victim-gate electrode layer is formed along a side wall and an upper surface of the Finns. A structuring process is performed on the victim-gate electrode layer to form a victim-gate electrode. A transformation process is performed on the victim gate electrode,to form a transformed victim-gate electrode. The transformed victim gate electrode has a first section along the Finnish surface and a second section along the Finnish side wall. A width of the first section decreases when the first section extends from an upper surface of the first section towards the upper surface of the fins. A width of the second section decreases when the second section extends from the surface of the fins towards the substrate.