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Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature

机译:微机电系统(MEMS)器件的结构控制高温压力

摘要

Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.
机译:本公开的各种实施例涉及一种集成芯片,其包括在器件基板上的覆盖结构。 器件基板包括第一微机电系统(MEMS)装置和从第一MEMS装置横向偏移的第二MEMS器件。 封盖结构包括第一腔覆盖第一MEMS装置和覆盖第二MEMS装置的第二腔。 第一腔具有第一气体压力,第二腔具有与第一腔不同的第二气体压力不同。 邻接第一腔的utgas层。 除了具有外磁石物种的外虫材料。 外虫材料是无定形的。

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