Failure analysis method with improved detection accuracy for advanced technology node

摘要

A method includes: determining a defective area in a semiconductor device of a semiconductor wafer; thinning the semiconductor wafer from a backside of the semiconductor wafer; bonding a first substrate to the backside of the semiconductor wafer, wherein the first substrate includes an opening and the defective area is exposed through the opening; and performing a test on the defective area by projecting a light beam from the backside through the opening.