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Semiconductor device having high-κ dielectric layer and method for manufacturing the same
Semiconductor device having high-κ dielectric layer and method for manufacturing the same
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机译:具有高κ介电层的半导体器件及其制造方法
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摘要
A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-κ dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.
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