DIELECTRIC LAYER, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE DIELECTRIC LAYER, AND METHODS OF MANUFACTURING THE DIELECTRIC LAYER AND THE SEMICONDUCTOR MEMORY DEVICE

摘要

Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of Be_xM_1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and less than 0.5.