OVERLAY ALIGNMENT MARK, METHOD FOR MEASURING OVERLAY ERROR, AND METHOD FOR OVERLAY ALIGNMENT

摘要

An overlay alignment mark, a method for measuring overlay error, and a method for overlay alignment are provided in the embodiments of the present disclosure. the overlay alignment mark is formed on a wafer to be detected and comprises a first pattern and a second pattern, the first pattern being located in a first layer of the wafer and comprising two first solid sub-patterns which are provided opposite to each other in a first direction and extend in a second direction perpendicular to the first direction, respectively, and the second pattern being located in a second layer above the first layer of the wafer and comprising two first hollowed sub-patterns which are provided opposite to each other in the first direction and two to second hollowed sub-patterns which are provided opposite to each other in the second direction; and two opposite side edges of each of the two first solid sub-patterns extending in the second direction are at least partially exposed from a respective one of the two first hollowed sub-patterns.