Methods for Modifying Photoresist Profiles and Tuning Critical Dimensions

摘要

Embodiments are provided for processing a substrate, such embodiments to provide photoresist profiles having smooth sidewall surfaces and to tune critical dimensions for patterned features and/or subsequently deposited dielectric layer. including a method of trimming the photoresist for The method may include depositing a sacrificial structural layer on the substrate, depositing a photoresist on the sacrificial structural layer, and patterning the photoresist to produce a coarse photoresist profile on the sacrificial structural layer. have. The method also includes trimming the photoresist using a plasma to create a fine photoresist profile that covers a first portion of the sacrificial structure layer while exposing a second portion of the sacrificial structure layer, wherein the photoresist is disposed on the substrate. etching a second portion of the sacrificial structure layer to form patterned features; and depositing a dielectric layer over the patterned features.