FORMATION OF HYBRID ISOLATION REGIONS THEROUGH RECESS AND RE-DEPOSITION

摘要

The method includes forming a semiconductor fin that protrudes higher than a top surface of the isolation region. The isolation region extends into the semiconductor substrate. The method includes etching a portion of the semiconductor fin to form a trench, filling the trench with a first dielectric material, the first dielectric material having a first bandgap, and recessing the first dielectric material to recess the first dielectric material. The method further includes performing a singe process. A recess is formed between opposing portions of the isolation region. The recess is filled with a second dielectric material. The first dielectric material and the second dielectric material are combined to form an additional isolation region. The second dielectric material has a second bandgap that is less than the first bandgap.