Method of making integrated bipolar semiconductor device by first forming junction isolation regions and recessed oxide isolation regions without birds beak

摘要

A method is presented for fabricating a bipolar semiconductor device utilizing a combination of junction isolation, oxide isolation, stepper lithography and plasma etching to produce an integrated circuit device having reduced device sizes and increased performance. The method includes the steps of removing portions of a masking layer to expose surface areas of an epitaxial layer, where first type isolation regions are then formed; then forming second type isolation regions in the epitaxial layer, and forming base, emitter and collector contact regions, also in the epitaxial layer; and forming conductive lines on the base, emitter and collector contact regions.